Bipolar transistor integrated circuit and method of manufacturin

Details Bipolar transistor integrated circuit and method of manufacturin Bipolar transistor integrated circuit and method of manufacturin

1987-11-17

1989-02-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437160, 437162, 437 61, H01L 21225

Patent

active

048031747

ABSTRACT:
In a bipolar transistor according to the present invention, interposed between both of a polysilicon film (603) on an emitter layer (3) and a first metal silicide film (502) on the polysilicon film (603) and a second metal silicide film (501) on a base layer (52) is only an oxide insulation film (105) on the edge wall of the polysilicon film (603).
In a method of manufacturing a bipolar transistor according to the present invention, a source (603) of first conductive type impurity and a source (6) of second conductive type impurity provided parallel to each other simultaneously diffuse the said impurities, whereby emitter and base layers can be formed substantially parallel to each other while the emitter layer is in contact with an isolation region.

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D. D. Tang, "Subnanosecond Self-Aligned 1.sup.2 L/MTL Circuits", IEEE Transactions on Electron Device, vol. ED-27, No. 8, Aug. 1980.
C. Y. Ting, "Silicide for Contacts and Interconnects", IEDM 84, pp. 110-113.

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