Bipolar transistor/insulated gate transistor hybrid semiconducto

Details Bipolar transistor/insulated gate transistor hybrid semiconducto Bipolar transistor/insulated gate transistor hybrid semiconducto

1991-08-20

1993-12-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257204, 257370, 257378, 257379, H01L 2710, H01L 2976

Patent

active

052723666

ABSTRACT:
A bipolar transistor/insulated gate transistor hybrid semiconductor device comprises a well region formed on a semiconductor substrate to serve as a first active region of a bipolar transistor, an insulated gate transistor having source and drain regions formed in the well region, which acts as a back gate of the insulated gate transistor, and second and third active regions of the bipolar transistor formed in the well region. At least one of the second and third active regions is used in common to one of the source and drain regions of the insulated gate transistor. A plurality of well regions is regularly arranged to constitute a gate array.

REFERENCES:
patent: 4661815 (1987-04-01), Takayama et al.
patent: 4675561 (1987-06-01), Bowers
patent: 4682202 (1987-07-01), Tanizawa
patent: 5066996 (1991-11-01), Hara et al.
patent: 5072285 (1991-12-01), Ueda et al.
patent: 5107147 (1992-04-01), Yee et al.

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