Bipolar transistor including optical waveguide

Details Bipolar transistor including optical waveguide Bipolar transistor including optical waveguide

1989-06-15

1991-07-02

Lee, John D.

350 9614, 357 34, G02B 610

Patent

active

050281089

ABSTRACT:
An optical device comprises a heterojunction bipolar transistor which includes a light guiding layer to which the base contact is made. A ridge is included adjacent to the light guiding layer and acts as the emitter or collector of the transistor, the ridge also defining the lateral extent of the light guiding region. Current injected via the base contact controls the electric field in the region of the ridge and hence the refractive index of the layer controlling the passage of light transmitted along it.

REFERENCES:
patent: 4093345 (1978-06-01), Logan et al.
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4382660 (1983-05-01), Pratt, Jr. et al.
patent: 4388633 (1983-06-01), Vasudev
patent: 4716449 (1987-12-01), Miller
"Operation Principle of the Ingaasp
p Laser Transistor" Mori et al., Applied Physics Lett 47(7) Oct. 1, 1985, pp. 649-651.
"Bipolar Transistor Carrier-Injected Optical Modulatory/Switch: Proposal and Analysis" Tada et al., IEEE Electrinics Device Letters, vol. EDL-7, No. 11, Nov. 1986, pp. 605-607.

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