Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Reexamination Certificate
2007-06-26
2007-06-26
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
C257S560000, C257S563000, C257S564000, C257S578000, C257S579000
Reexamination Certificate
active
11033870
ABSTRACT:
A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electrically isolated and spatially separated from each other. The plural divided sub-emitter regions may typically have a uniform emitter size identical with a basic emitter size of the basic bipolar transistor. A set of the plural divided sub-emitter regions provides an intended emitter current distinctly larger than the basic emitter current by a highly accurate direct current amplification factor corresponding to an intended emitter-size magnification factor.
REFERENCES:
patent: 3560814 (1971-02-01), Engbert et al.
patent: 3702955 (1972-11-01), Kalb et al.
patent: 3704398 (1972-11-01), Fukino
patent: 3895977 (1975-07-01), Sanders
patent: 4119997 (1978-10-01), Fulkerson
patent: 4297597 (1981-10-01), Kimura
patent: 4370670 (1983-01-01), Nawata et al.
patent: 4513306 (1985-04-01), Davies
patent: 4656496 (1987-04-01), Widlar
patent: 5138417 (1992-08-01), Noda
patent: 5387813 (1995-02-01), Iranmanesh et al.
patent: 5907180 (1999-05-01), Johansson et al.
patent: 6015982 (2000-01-01), Soderbarg
patent: 6236072 (2001-05-01), Tilly et al.
patent: 0 029 369 (1981-05-01), None
patent: 2 634 948 (1990-02-01), None
patent: 60-227471 (1985-11-01), None
patent: 61-194774 (1986-08-01), None
patent: 62-14456 (1987-01-01), None
patent: 2-5431 (1990-01-01), None
patent: 02-250369 (1990-10-01), None
patent: 6-224214 (1994-08-01), None
patent: 8-130222 (1996-05-01), None
Nadav Ori
NEC Electronics Corporation
Young & Thompson
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