Bipolar transistor including a compound semiconductor

Details Bipolar transistor including a compound semiconductor Bipolar transistor including a compound semiconductor

1996-08-27

1999-05-11

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257191, 257197, 257592, 257655, 257744, 257745, H01L31/0328;31/0336;31/072;31/109

Patent

active

059030186

ABSTRACT:
The bipolar transistor includes an emitter layer at least a part of which is composed of AlGaAs, a collector layer at least a part of which is composed of GaAs, a base contact layer disposed in at least a part of an area between a base electrode and a base layer, and a base layer at least a part of which is composed of an InGaAs graded layer in which the concentration of In gradually increases from an emitter-base junction towards a base-collector junction.

REFERENCES:
patent: 4518979 (1985-05-01), Dumke et al.
patent: 5571732 (1996-11-01), Liu
H. Shimawaki et al., "AlGaAs/GaAs HBTs with heavily C-doped extrinsic base layers selectively grown by MOMBE", Technical Report of IEICE, 1993, pp. 23-29.

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