Bipolar transistor including a base layer containing carbon...

Details Bipolar transistor including a base layer containing carbon... Bipolar transistor including a base layer containing carbon...

2002-12-20

2009-12-08

Mai, Anh D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S592000, C257SE27053, C257SE27074

Reexamination Certificate

active

07629628

ABSTRACT:
A transistor includes an emitter, a collector, and a base layer having a base contact. The base layer includes an intrinsic region between the emitter and the collector, an extrinsic region between the intrinsic region and the base contact, and a first doping layer that is doped with a trivalent substance, that extends into the extrinsic region, and that is counter-doped with a pentavalent substance in a region adjacent to the emitter.

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