Bipolar transistor in isolation well with angled corners

Details Bipolar transistor in isolation well with angled corners Bipolar transistor in isolation well with angled corners

1986-11-19

1989-01-17

James, Andrew J.

357 34, 357 59, 357 47, H01L 2704, H01L 2970, H01L 2946

Patent

active

047990996

ABSTRACT:
A bipolar transistor formed on the face of a semiconductor substrate which includes an extrinsic base of a first conductivity type formed in a portion of an emitter-base region of said semiconductor. A conducting base contacting layer is formed over the extrinsic base which has a non-conducting spacer formed over a sidewall thereof. An intrinsic base in the emitter-base region is juxtaposed to the extrinsic base. An emitter of a second conductivity type is formed within the intrinsic base with an edge of the emitter being aligned with an outer edge of the spacer.

REFERENCES:
patent: 3962779 (1976-06-01), Edwards et al.
patent: 4164668 (1979-08-01), Delaporte et al.
patent: 4431460 (1984-02-01), Barson et al.
patent: 4470062 (1984-09-01), Muramatsu
patent: 4583106 (1986-04-01), Anantha et al.
patent: 4595944 (1986-06-01), Antipov
patent: 4611386 (1986-09-01), Goto
patent: 4631803 (1986-12-01), Hunter et al.
Barson et al., "Isolated resistor having Doped Polysicon Contacts . . . ", IBM Tech. Discl. Bull., vol. 25, No. 7A, pp. 3585-3586, Dec. 1982.

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