Bipolar transistor having thin intrinsic base with low base resi

Details Bipolar transistor having thin intrinsic base with low base resi Bipolar transistor having thin intrinsic base with low base resi

1995-09-25

1997-09-16

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257588, 257373, H01L 2900, H01L 27082, H01L 27102, H01L 2970

Patent

active

056683960

ABSTRACT:
A bipolar transistor has a first semiconductor region of an n-type epitaxial layer surrounded by a first insulating film, a second insulating film of silicon oxide having an opening, a second semiconductor region as a base link region of a p-type formed in the opening and having a high impurity concentration and a thickness substantially the same as that of the second insulating film, a third semiconductor region as an intrinsic base of a p-type having a thickness thinner than that of the second insulating film, a sidewall insulating film covering the third semiconductor region, and a fourth semiconductor of a p-type formed on the third semiconductor region and surrounded by the side-wall insulating film. The reduction in the thickness of the intrinsic base is achieved without reducing the thickness of the base link region and thus it is possible to realize a bipolar transistor in which a cut-off frequency is high and yet the base resistance is low.

REFERENCES:
patent: 4782030 (1988-11-01), Katsumata et al.
patent: 5073810 (1991-12-01), Owada et al.
patent: 5177583 (1993-01-01), Endo et al.
patent: 5245204 (1993-09-01), Morishita
patent: 5247192 (1993-09-01), Nii
patent: 5323031 (1994-06-01), Shoji et al.
patent: 5374846 (1994-12-01), Takemura
patent: 5402002 (1995-03-01), Meister et al.
patent: 5465006 (1995-11-01), Chen
English Language Abstract of JPA 4-330730 (A).

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