Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2005-07-05
2008-12-16
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257S587000, C257S588000, C257S592000
Reexamination Certificate
active
07466010
ABSTRACT:
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.
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Ahlgren David C.
Freeman Gregory G.
Khater Marwan H.
Volant Richard P.
Hu Shouxiang
International Business Machines - Corporation
Li, Esq. Todd M. C.
Scully , Scott, Murphy & Presser, P.C.
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