Bipolar transistor having self-aligned silicide and a...

Details Bipolar transistor having self-aligned silicide and a... Bipolar transistor having self-aligned silicide and a...

2005-12-27

2005-12-27

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257S576000, C257S592000, C257S584000, C257S586000

Reexamination Certificate

active

06979884

ABSTRACT:
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.

REFERENCES:
patent: 5198689 (1993-03-01), Fujioka
patent: 6177717 (2001-01-01), Chantre et al.
patent: 6248650 (2001-06-01), Johnson
patent: 6399993 (2002-06-01), Ohnishi et al.
patent: 6767798 (2004-07-01), Kalnitsky et al.
patent: 2002/0158311 (2002-10-01), Ohnishi et al.
patent: 2002/0168829 (2002-11-01), Bock et al.
patent: 2003/0193077 (2003-10-01), Fujii
patent: 2003/0227071 (2003-12-01), Chen

Affiliated with

Also associated with

Rating

Bipolar transistor having self-aligned silicide and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar transistor having self-aligned silicide and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor having self-aligned silicide and a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3470878