Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1995-12-08
1998-01-27
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
257585, 257587, 257592, 257593, H01L 2970, H01L 29739
Patent
active
057125058
ABSTRACT:
A ring-shaped emitter region is formed either in a region a little toward an inner periphery or in a region a little toward an outer periphery in an upper layer portion of a ring-shaped base region of a bipolar transistor.
A conductive layer is laminated through an insulating layer in a region surrounded by the ring-shaped emitter region provided a little toward the inner periphery of the base region, a conductive side wall is formed on the sides of the conductive layer and the insulating layer, and the ring-shaped emitter region and the conductive layer are connected through the conductive side wall. A metallic emitter electrode is connected to the conductive layer.
On the other hand, in a region surrounded by the ring-shaped base region in which the ring-shaped emitter region is formed a little toward the outer periphery, a conductive layer is laminated through an insulating layer, a conductive side wall is formed on the sides of the conductive layer and the insulating layer, and the ring-shaped base region and the conductive layer are connected through the conductive side wall. A metallic base electrode is connected to the conductive layer.
Since an emitter region and a collector region have the same conduction type in a bipolar transistor, such a bipolar transistor that has a construction in which the emitter described above is used as a collector is also available.
REFERENCES:
patent: 5070030 (1991-12-01), Ikeda et al.
patent: 5204277 (1993-04-01), Somero et al.
patent: 5258642 (1993-11-01), Nakamura
patent: 5389552 (1995-02-01), Iranmanesh
patent: 5409845 (1995-04-01), Robinson et al.
S. Nakamura et al., Bipolar Technology for a 0.5-Micron-Wide Base Transistor With an ECL Gate Delay of 21.5 Picoseconds, International Electron Devices Meeting 1992, IEEE, pp. 445-448.
Brown Peter Toby
Fujitsu Limited
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