Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2007-03-13
2007-03-13
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S522000, C257SE21573, C257SE21581, C438S318000, C438S322000
Reexamination Certificate
active
10708860
ABSTRACT:
Structure and method are provided for forming a bipolar transistor. As disclosed, an intrinsic base layer is provided overlying a collector layer. A low-capacitance region is disposed laterally adjacent the collector layer. The low-capacitance region includes at least one of a dielectric region and a void disposed in an undercut underlying the intrinsic base layer. An emitter layer overlies the intrinsic base layer, and a raised extrinsic base layer overlies the intrinsic base layer.
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Akatsu Hiroyuki
Divakaruni Rama
Khater Marwan
Schnabel Christopher M.
Tonti William
Huynh Andy
International Business Machines - Corporation
Neff Daryl K.
Nguyen Dao H.
Schnurmann H. Daniel
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