Bipolar transistor having reduced base-collector capacitance whi

Details Bipolar transistor having reduced base-collector capacitance whi Bipolar transistor having reduced base-collector capacitance whi

1994-12-28

1996-03-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257593, 257756, H01L 27082, H01L 2941

Patent

active

055005543

ABSTRACT:
A bipolar transistor with a structure such that it is possible to reduce the parasitic capacity without sacrificing improvements in cut-off frequency f.sub.T, in which a P.sup.+ -type polycrystalline silicon film 122A is provided on the side wall of an opening 143A which is provided in a silicon nitride film 152A serving as the middle layer of a laminated insulation film 107A, and, a P-type single crystal silicon layer 121A constituting the intrinsic base region is connected to a P.sup.+ -type polycrystalline silicon film 111 which is a base drawing electrode via a thin P.sup.+ -type polycrystalline silicon film 123A.

REFERENCES:
patent: 5101256 (1992-03-01), Harame et al.
patent: 5235206 (1993-08-01), Desilets et al.
patent: 5321301 (1994-06-01), Sato et al.
patent: 5374846 (1994-12-01), Takemura

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