Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1999-07-30
2000-09-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257 77, 257587, 257591, H01L 310312, H01L 2358, H01L 27082
Patent
active
061147451
ABSTRACT:
A vertical conduction NPN bipolar transistor with a tunneling barrier of silicon carbide in the emitter providing a high emitter injection efficiency and high, stable current gain. The emitter structure comprises a heavily doped polysilicon layer atop a silicon carbide layer that contacts a shallow, heavily doped emitter region at the surface of an epitaxial silicon layer, which is disposed on a monocrystallinie silicon substrate. The silicon carbide layer is about 100 to 200 angstroms thick and has a composition selected to provide an energy band gap in the 1.8 to 3.5 eV range. The thickness and composition of the silicon carbide can be varied within the preferred ranges to tune the transistor's electrical characteristics and simplify the fabrication process.
REFERENCES:
patent: 5708281 (1998-01-01), Morishita
patent: 5739062 (1998-04-01), Yoshida et al.
patent: 6049098 (2000-04-01), Sato
Do-Bento-Vieira Viviane Marguerite
Fang Ming
Liu Jin
Thomas Gilles E.
Galanthay Theodore E.
Jorgenson Lisa K.
Ngo Ngan V.
STMicroelectronics Inc.
Thoma Peter J.
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