Bipolar transistor having external base region

Details Bipolar transistor having external base region Bipolar transistor having external base region

1990-09-17

1992-06-23

Kunemund, Robert

Fishing, trapping, and vermin destroying

148DIG11, 148DIG72, 357 34, H01L 21265, H01L 2970

Patent

active

051242702

ABSTRACT:
A bipolar transistor is provided with an external base region. The bipolar transistor comprises a first semiconductor layer of a first conductivity type, the first semiconductor layer serving as a collector region, a second semiconductor layer of a second conductivity type, which is formed on the first semiconductor layer and includes a base region and an external base region located around the base region, a third semiconductor layer of the first conductivity type, which is formed on the second semiconductor layer and serves as an emitter region, a metal layer formed on the third semiconductor layer and serving as an emitter electrode, the metal layer including a first metal layer portion which is substantially as wide as the base region located in an intrinsic transistor region, and a second metal layer portion which is formed on the first metal layer portion and is wider than the first metal portion, a base electrode located on the external base region of the second semiconductor layer, and a collector electrode connected to the first semiconductor layer.

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patent: 4889831 (1989-12-01), Ishii et al.
patent: 4914049 (1990-04-01), Huang et al.
W. P. Dumke et al.: "GaAs-GaAlAs Hetrojunction Transistor for High Frequency Operation" Solid-State Electronics, 1972, vol. 15 pp. 1339-1343.
M. Suzuki et al.: "Refractory T Gate Self-Aligned GaAs FET (1)" p. 644 Extended Abstracts (The 32nd Spring Meeting, 1985); The Japan Society of Applied Physics and Related Societies.

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