Bipolar transistor having enhanced high speed operation through

Details Bipolar transistor having enhanced high speed operation through Bipolar transistor having enhanced high speed operation through

1994-12-13

1996-06-04

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257588, 257592, 257514, 257515, H01L 27082, H01L 27102, H01L 2970, H01L 2900

Patent

active

055236146

ABSTRACT:
A semiconductor device includes an n-type low-resistance region (2) formed on a p-type monocrystalline semiconductor substrate (1), an n-type epitaxial layer (3) formed on the n-type low-resistance region (2), an insulating film (5) formed on the n-type epitaxial layer (3) and having a first opening selectively formed therein, and an n-type polysilicon film (8) having an overhung portion extending from the entire peripheral portion of the opening to the inside of the opening. An n-type polysilicon film (9) is formed downward from the bottom surface of the overhung portion, and a p-type monocrystalline silicon film (6) serving as a base is formed on the surface of the n-type epitaxial layer in the first opening. The base (6) is in contact with the n-type polysilicon films (8, 9), and the n-type emitter (10) is formed immediately below the n-type emitter polysilicon films (8, 9) to have an annular shape.

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