Bipolar transistor having collector electrode penetrating emitte

Details Bipolar transistor having collector electrode penetrating emitte Bipolar transistor having collector electrode penetrating emitte

1993-02-25

1994-09-06

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257586, 257587, 257593, H01L 27082, H01L 2940, H01L 2970

Patent

active

053451023

ABSTRACT:
A bipolar transistor with a trench. The trench extends down into a buried collector region through an emitter region, the underlying intrinsic base and collector regions at their center portion. Insulating films are formed on the sidewalls of the trench. The trench is filled with a collector-connection conductor which contacts with the buried collector region.

REFERENCES:
patent: 4492008 (1985-01-01), Anantha et al.
patent: 4963957 (1990-10-01), Ohi et al.

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