Bipolar transistor having base region with coupled delta layers

Details Bipolar transistor having base region with coupled delta layers Bipolar transistor having base region with coupled delta layers

1994-09-15

1999-10-12

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase inverse gain

257572, 257583, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

059659319

ABSTRACT:
A bipolar transistor includes multiple coupled delta layers in the base region between the emitter and collector regions to enhance carrier mobility and conductance. The delta layers can be varied in number, thickness, and dopant concentration to optimize desired device performance and enhanced mobility and conductivity vertically for emitter to collector and laterally parallel to the delta-doped layers. The transistors can be homojunction devices or heterojunction devices formed in either silicon or III-V semiconductor material.

REFERENCES:
patent: 4926221 (1990-05-01), Levi
patent: 5013685 (1991-05-01), Chiu et al.
Koremer, "Heterostructure Bipolar Transistors and Integrated Circuits," 0018-9219/82/0100-0013, 1982 IEEE, pp. 13-25.
Patton, et al., "75-GHz .function..sub.T SiGe-Base Heterojunction Bipolar Transistors," IEEE Electron Device Letters, vol. 11, No. 4, Apr. 1990, pp. 171-173.
Malik, et al., "A Planar-Doped 2D-Hole Gas Base AlGaAs/GaAs Heterojunction Bipolar Transistor Grown by Molecular Beam Epitaxy," IEEE Electron Device Letters, vol. 9, No. 1, pp. 7-9.
Kuo, et al., "Planarized Be .delta.-Doped Heterostructure Bipolar Transistor Fabricated Using Doping Selective Contact and Selective Hole Epitaxy," Japanese Journal of Applied Physics, vol. 30, No. 2B, Feb. 1991, pp.L262-L265.

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