Bipolar transistor having base over buried insulating and...

Details Bipolar transistor having base over buried insulating and... Bipolar transistor having base over buried insulating and...

2007-02-20

2007-02-20

Le, Thao X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257S197000, C257S586000, C257S592000, C257SE29200, C438S309000, C438S348000, C438S361000

Reexamination Certificate

active

10889878

ABSTRACT:
A bipolar transistor in a monocrystalline semiconductor substrate (101), which has a first conductivity type and includes a surface layer (102) of the opposite conductivity type. The transistor comprises an emitter contact (110) on the surface layer; a base contact (130and131) extending through a substantial portion (141) of the surface layer, spaced apart (140a) from the emitter; an insulator region (150/151) buried under the base contact; a collector contact (120); and a first polycrystalline semiconductor region (152/153) selectively located under the insulator region, and a second polycrystalline semiconductor region (154) selectively located under the collector contact. These polycrystalline regions exhibit heavy dopant concentrations of the first conductivity type; consequently, they lower the collector resistance.

REFERENCES:
patent: 4749661 (1988-06-01), Bower
patent: 4984048 (1991-01-01), Sagara et al.
patent: 5250448 (1993-10-01), Hamasaki et al.
patent: 5350948 (1994-09-01), Maehara
patent: 5391912 (1995-02-01), Horiuchi et al.
patent: 6656811 (2003-12-01), Swanson et al.
patent: 2004/0089886 (2004-05-01), Hattori et al.

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