Bipolar transistor having base contact layer in contact with low

Details Bipolar transistor having base contact layer in contact with low Bipolar transistor having base contact layer in contact with low

1997-12-12

2000-03-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257197, 257586, 257587, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

060376163

ABSTRACT:
In a bipolar transistor including a semi-insulating substrate, a collector layer formed on the semi-insulating substrate and a base layer formed on the collector layer, a base contact layer is in contact; with a part of a lower surface of the base layer.

REFERENCES:
patent: 4825265 (1989-04-01), Lunardi et al.
patent: 4996166 (1991-02-01), Ohshima
patent: 5003366 (1991-03-01), Mishima et al.
patent: 5036372 (1991-07-01), Ohishi et al.
patent: 5329245 (1994-07-01), Nakagawa
patent: 5332912 (1994-07-01), Nozu et al.
patent: 5567961 (1996-10-01), Usagawa et al.
Hidenori Shimawaki et al., "High-.function.max AIGaAs/InGaAs and AIGaAs/GaAs HBT's with p+/p Regrown Base Contact", IEE Transaction on Electorn Devices., vol. 42, No. Oct. 10, 1995.
Yasushi Amamiya et al., "Lateral p+/p Regrown Base Contacts for AIGaAs/InGaAs HBTs with Extremely Thin Base Layers", IEE 1996 54th Annual Device Research Conference Digist, pp. 38-39, 1996.

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