Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-02-08
2005-02-08
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S511000, C257S525000, C257S552000, C257S565000
Reexamination Certificate
active
06853048
ABSTRACT:
The present invention provides a bipolar transistor and a method of manufacture thereof. The bipolar transistor includes a dielectric region located in a semiconductor substrate and a collector located in the semiconductor substrate and at least partially over the dielectric region. The bipolar transistor device further includes a base located over and in contact with the dielectric region and at least partially about the collector and an emitter located over and in contact with the dielectric region and adjacent the base.
REFERENCES:
patent: 4551743 (1985-11-01), Murakami
patent: 4769687 (1988-09-01), Nakazato et al.
patent: 4949151 (1990-08-01), Horiuchi et al.
patent: 4992843 (1991-02-01), Blossfeld et al.
patent: 5049521 (1991-09-01), Belanger et al.
patent: 5086322 (1992-02-01), Ishii et al.
patent: 5258642 (1993-11-01), Nakamura
patent: 5298450 (1994-03-01), Verret
patent: 5391907 (1995-02-01), Jang
patent: 5747871 (1998-05-01), Lee et al.
patent: 5834793 (1998-11-01), Shibata
patent: 5877046 (1999-03-01), Yu et al.
patent: 5877539 (1999-03-01), Yamazaki
patent: 6013936 (2000-01-01), Colt, Jr.
patent: 6246094 (2001-06-01), Wong et al.
patent: 6271566 (2001-08-01), Tsuchiaki
patent: 6344669 (2002-02-01), Pan
patent: 6346729 (2002-02-01), Liang et al.
patent: 5-335329 (1993-12-01), None
patent: 5-343415 (1993-12-01), None
patent: 411274483 (1999-10-01), None
Agere Systems Inc.
Nadav Ori
LandOfFree
Bipolar transistor having an isolation structure located... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar transistor having an isolation structure located..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor having an isolation structure located... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3453636