Bipolar transistor having an integrated resistive emitter zone

Details Bipolar transistor having an integrated resistive emitter zone Bipolar transistor having an integrated resistive emitter zone

1979-02-14

1981-03-24

Wojciechowicz, Edward J.

357 34, 357 36, 357 88, H01L 2702

Patent

active

042583802

ABSTRACT:
A bipolar transistor includes an integrated resistive emitter zone of closed geometric configuration which divides the emitter region of the transistor into two sub-regions. The integrated resistive emitter zone serves to improve the secondary breakdown characteristics of the transistor, so that transistors in accordance with the invention are particularly suited for use in power transistors.

REFERENCES:
patent: 3427511 (1969-02-01), Rosenzweig

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