Bipolar transistor having an improved epitaxial base region

Details Bipolar transistor having an improved epitaxial base region Bipolar transistor having an improved epitaxial base region

1997-01-17

1998-08-04

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257197, 257576, 257592, 257616, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

057898006

ABSTRACT:
A base region structure of a bipolar transistor is provided. The base region structure is formed over both an epitaxial layer having a first conductivity type and an insulation film. The base region structure comprises a single layer having a first conductivity type. The single layer comprises both an epitaxial portion extending over the epitaxial layer and a polycrystal portion extending over the insulation film. An emitter region is formed at an upper part of the epitaxial portion. The epitaxial portion serves as a base region and the polycrystal portion serves as a base plug lead.

REFERENCES:
patent: 5391503 (1995-02-01), Miwa et al.
patent: 5523606 (1996-06-01), Yamazaki
patent: 5569611 (1996-10-01), Imai
patent: 5629556 (1997-05-01), Johnson
patent: 5648280 (1997-07-01), Kato

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