Bipolar transistor having an emitter with interdigitated comb-sh

Details Bipolar transistor having an emitter with interdigitated comb-sh Bipolar transistor having an emitter with interdigitated comb-sh

1993-07-08

1994-11-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257591, 257539, 257582, H01L 27082, H01L 2970

Patent

active

053692985

ABSTRACT:
A semiconductor device has a semiconductor substrate including a base region and an emitter region in the base region. The emitter region in the base region has a comb-teeth-shaped outer edge. The emitter region has a window through which the base region is exposed. The window has an extended ares to reach portions of the emitter region near the comb-teeth-shaped outer edge of the emitter region. Consequently, the area of junction between the window and the emitter region os increased to suppress concentration of electrical current in the window and to improve electrical characteristics such as secondary yield breakdown strength.

REFERENCES:
patent: 977020 (1976-08-01), Enzlin et al.

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