Bipolar transistor having an electrode structure suitable for in

Details Bipolar transistor having an electrode structure suitable for in Bipolar transistor having an electrode structure suitable for in

1992-03-09

1994-08-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257588, 257557, 257564, H01L 2940, H01L 2970, H01L 27082

Patent

active

053410211

ABSTRACT:
A contact hole for guiding an emitter electrode of bipolar transistors continuously arrayed and a contact hole for guiding a base electrode are positioned not to be arranged in the continuous array direction of the bipolar transistors. Also, the emitter electrode and the base electrode are respectively drawn from these contact holes in two directions different from the continuous array direction of the bipolar transistors. At least one of the base electrode and the emitter electrode is formed on a conductive layer of a polycide structure contacting an active region in a substrate to be connected.

REFERENCES:
patent: 4716314 (1987-12-01), Mulder et al.
patent: 4860085 (1989-08-01), Feygenson
patent: 4882290 (1989-11-01), Komatsu
patent: 5184206 (1993-02-01), Neugebauer et al.

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