Bipolar transistor having a self-aligned base electrode and meth

Details Bipolar transistor having a self-aligned base electrode and meth Bipolar transistor having a self-aligned base electrode and meth

1996-08-13

1998-05-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With non-planar semiconductor surface

257552, 257565, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

057478716

ABSTRACT:
A bipolar transistor and a process for manufacturing thereof is disclosed. The bipolar transistor has a self-aligned base electrode in which first and second pillars are formed within first and second trenches which act as an activated region and a collector region, respectively; a conductive impurities layer of high density formed at a bottom side of the first and second trenches and at a lower portion of an isolation wall between the first and second trenches; and a sequentially formed base and emitter layer. After connection to the base layer, a base contact electrode is formed within the first trench, and a collector contact electrode is formed by implanting second conductive impurities in the second pillar.

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patent: 4969026 (1990-11-01), Van der Velden et al.
patent: 5496745 (1996-03-01), Ryum et al.

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