Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1996-04-24
1999-10-05
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257579, H01L 27082, H01L 27102
Patent
active
059629134
ABSTRACT:
A base region and an emitter region are formed at a surface of an n-well region (collector region). A contact hole reaching a portion of the surface of the collector region is formed, a contact hole reaching a portion of the surface of the emitter region is formed, and a contact hole reaching a portion of the surface of the base region is formed. A collector electrode, an emitter electrode and a base electrode are formed in the contact holes, respectively. Assuming that L represents a longitudinal length of the contact hole accommodating the emitter electrode and S represents a width thereof perpendicular to the longitudinal direction, a value of L/S is 10 or more. Thereby, a collector resistance of a bipolar transistor can be reduced, and a manufacturing cost can be reduced.
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patent: 3758797 (1973-09-01), Peterson et al.
patent: 4536945 (1985-08-01), Gray et al.
patent: 4780427 (1988-10-01), Sakai et al.
patent: 5011784 (1991-04-01), RatnaKuman
patent: 5151765 (1992-09-01), Yamuchi
patent: 5229663 (1993-07-01), Itoh et al.
patent: 5414291 (1995-05-01), Miwa et al.
Fahmy Wael
Mitsubishi Denki & Kabushiki Kaisha
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