Bipolar transistor having a collector groove extending below a m

Details Bipolar transistor having a collector groove extending below a m Bipolar transistor having a collector groove extending below a m

1995-08-10

1997-06-10

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257588, H01L 27082, H01L 27102

Patent

active

056379110

ABSTRACT:
A bipolar transistor is shown having a collector of one conductivity type, a base of an opposite conductivity type, and an emitter of the one conductivity type, which are formed in a semiconductor substrate. A major surface portion of the substrate is doped with an impurity of the one conductivity type to form a buried layer of the one conductivity type. An epitaxial layer is grown on an entire surface of a major surface portion of the substrate. A diffusion region of the opposite conductivity type is formed in an emitter formation region on a major surface portion of the substrate with the diffusion region serving as an intrinsic base region. An insulating interlayer is formed on the major surface portion of the substrate and covers the intrinsic base region. Portions of the insulating interlayer define an emitter electrode layer contact hole that reaches the diffusion region at an emitter region. Portions of the epitaxial layer define a collector groove that extends below the major surface portion of the substrate and is deeper than at least half of the width of the epitaxial layer. An impurity of the one conductivity type is diffused into the epitaxial layer at the bottom of the collector groove and into the diffusion region at the emitter region.

REFERENCES:
patent: 5280190 (1994-01-01), Lu

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