Bipolar transistor formed using selective and non-selective...

Details Bipolar transistor formed using selective and non-selective... Bipolar transistor formed using selective and non-selective...

2007-09-08

2008-12-09

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S586000

Reexamination Certificate

active

07462923

ABSTRACT:
According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitaxial extension layer extends over the first and second isolation regions. The bipolar transistor further includes a base layer situated on the epitaxial extension layer, where the base layer includes an epitaxial base, and where the epitaxial base includes a usable emitter formation area. The active area has a first width and the usable emitter formation area has a second width, where the second width is at least as large as the first width.

REFERENCES:
patent: 4829016 (1989-05-01), Neudeck
patent: 5834800 (1998-11-01), Jalali-Farahani et al.
patent: 5861640 (1999-01-01), Gomi
patent: 7291898 (2007-11-01), U'Ren

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