Bipolar transistor, for voltage controlled oscillator using...

Details Bipolar transistor, for voltage controlled oscillator using... Bipolar transistor, for voltage controlled oscillator using...

2005-09-06

2005-09-06

Chang, Joseph (Department: 2817)

Oscillators

Solid state active element oscillator

Transistors

C331S03600C, C257S516000

Reexamination Certificate

active

06940357

ABSTRACT:
There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.

REFERENCES:
patent: 5055838 (1991-10-01), Wise et al.
patent: 5600157 (1997-02-01), Abiko et al.
patent: 6407432 (2002-06-01), Nemoto et al.
patent: 6417557 (2002-07-01), Haruki
patent: 2004/0041201 (2004-03-01), Sugiyama et al.
patent: 2003-174033 (2003-06-01), None
Toyoda, et al., “Hight-Breakdown-Voltage SiGe HBT Device for VCOs”, 2001 New Technology of Matsushita Electric Industrial Co., Ltd., May 2002, pp. 121-124.

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