Bipolar transistor for very high frequencies

Details Bipolar transistor for very high frequencies Bipolar transistor for very high frequencies

1997-04-11

1998-08-25

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257191, H01L 310328, H01L 310336, H01L 31072

Patent

active

057985391

ABSTRACT:
Bipolar transistor for very high frequencies having a delta-p-doped base layer and a drift zone between the base layer and an n.sup.+ -doped collector terminal layer, the drift zone, at least in a base-end region, being made of a material having a split conduction band structure which, in the drift direction, energetically favors light electrons.

REFERENCES:
Iyer et al., Heterojunction Bipolar Transistors Using Si-Ge Alloys, IEEE Trans on Elec. Dev. v. 36, No. 10, Oct. 1989 pp. 2043-2063.
Gary L. Patton et al.: "Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors". In: IEEE Electron Device Letters, vol. 10, No. 12, Dec. 1989, pp. 534-536.
M. Karlsteen et al.: "Optimized Frequency Characteristics of Si/SiGe heterojunction and Conventional Bipolar Transistors". In: Solid-State Electronics, vol. 33, No. 2, 1990, pp. 199-204.
C.Y. Change et al.:"Molecular beam epitaxially grown circular U-groove barrier transistor." In: Appl. Phys. Lett. 46 (11), Jun. 1, 1985, pp. 1084-1086.
Muhammad I. Chaudhry: "Electrical Tansport Properties of Crystalline Silicon Carbide/Silicon Heterojunctions" In: IEEE Electron Device Letters, vol. 12, No. 12, Dec. 1991, pp. 670-672.
K.W. Gossen et al.: "Monolayer .delta.-doped heterojunction bipolar transistor characteristics from 10 to 350 K". In: Appl. Phys. Lett. 59 (6), Aug. 5, 1991, pp. 682-684.
T.Y. Kuo et al.: "Planarized Be .delta.-Doped Heterostructure Bipolar Transistor Fabricated Using Doping Selective Contact and Selective Hole Epitaxy". In: Jap. Journal of Appl. Phys, vol. 30, No. 2B, Feb. 91, pp. L262-L265.
A. Pruijmboom et al.: "Heterojunction Bipolar Transistors with SiGe Base Grown by Molecular Beam Epitaxy". In: IEEE Electron Device Letters, vol. 12, No. 7, Jul. 1991, pp. 357-359.
Theodore I. Kamins et al.: "Small-Geometry, High-Performance, Si--Si.sub.1 --.sub.x Ge.sub.x Heterojunction Bipolar Transistors". In: IEEE Electron Device Letters, vol. 10 No. 11, Nov. 1989, pp. 503-505.
Shih-Chih Chen et al.: "The Fabrication and Study of InGaAsP/InP Double-Collector Heterojunction Bipolar Transistors". In: Solid-State Electronics 34 (1991) Jul., No. 7, pp. 787-794.

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