Bipolar transistor for high power in the microwave range

Details Bipolar transistor for high power in the microwave range Bipolar transistor for high power in the microwave range

1994-05-19

1995-07-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257514, 257515, 257517, 257520, 257579, 257584, H01L 29161, H01L 29205, H01L 29225

Patent

active

054364752

ABSTRACT:
A power transistor has a plurality of small emitter-base complexes arranged in an array. These complexes are electrically insulated from the surrounding semiconductor material by separating regions such that for the current supply to the collectors, a joint subcollector layer and thereupon a collector metallization exist outside of the emitter-base complexes and reaching up to the separating regions. The individual emitter-base complexes are electrically connected with each other via strip-shaped base supply lines and strip-shaped emitter supply lines, and also with a base contact surface and an emitter contact surface.

REFERENCES:
patent: 4291319 (1981-09-01), Carinalli
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4635087 (1987-01-01), Birrittella et al.
patent: 4677455 (1987-06-01), Okajima
patent: 4686557 (1987-08-01), Mahrla
patent: 4939526 (1990-07-01), Alderstein
patent: 4939562 (1990-07-01), Alderstein
patent: 5073812 (1991-12-01), Shimura
patent: 5095351 (1992-03-01), Gotou
patent: 5124270 (1992-06-01), Morizuka
Wang et al., "Design Optimization of Microwave Power Heterojunction Bipolar Transistor Cells", IEEE MTT-S Digest, 1989, pp. 1061-1064.
Electronics Letters, Jul. 20, 1989, vol. 25, No. 15, "2-5W, C-Band, GaAs/AlGaAs Heterojunction Bipolar Power Transistor", pp. 979-981.

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