Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2005-09-20
2005-09-20
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257S565000, C257S197000, C257S580000
Reexamination Certificate
active
06946720
ABSTRACT:
An integrated circuit including a bipolar transistor with improved forward second breakdown is disclosed. In one embodiment, the bipolar transistor includes a base, a collector, a plurality of emitter sections coupled to a common emitter and a ballast emitter for each emitter section. Each ballast resistor is coupled between the common emitter and an associated emitter section. The size of each ballast resistor is selected so that the size of the ballast resistors vary across a two dimensional direction in relation to a lateral surface of the bipolar transistor.
REFERENCES:
patent: 3704398 (1972-11-01), Fukino
patent: 4202005 (1980-05-01), Sanders
patent: 4231059 (1980-10-01), Hower et al.
patent: 4358717 (1982-11-01), Elliott
patent: 4639757 (1987-01-01), Shimizu
patent: 4656496 (1987-04-01), Widlar
patent: 5104816 (1992-04-01), Verret et al.
patent: 5182531 (1993-01-01), Fieldler et al.
patent: 5298785 (1994-03-01), Ito et al.
patent: 5321279 (1994-06-01), Khatibzadeh et al.
patent: 5378922 (1995-01-01), Sovero
patent: 5387813 (1995-02-01), Iranmanesh et al.
patent: 5389554 (1995-02-01), Liu et al.
patent: 5455188 (1995-10-01), Yang
patent: 5616950 (1997-04-01), Liu
patent: 6025015 (2000-02-01), Landry-Coltrain et al.
patent: 6064109 (2000-05-01), Blanchard et al.
patent: 6069404 (2000-05-01), Aufinger et al.
patent: 6303973 (2001-10-01), Nakagawa et al.
patent: 6348724 (2002-02-01), Koomen et al.
patent: 6437421 (2002-08-01), Thiel et al.
patent: 6455919 (2002-09-01), Brennan et al.
patent: 6483170 (2002-11-01), Johansson
patent: 6583972 (2003-06-01), Verhaege et al.
patent: 6587320 (2003-07-01), Russ et al.
patent: 6627925 (2003-09-01), Finlay
patent: 6686801 (2004-02-01), Cho et al.
patent: 6707341 (2004-03-01), Yamamoto et al.
patent: 6768140 (2004-07-01), Hong et al.
patent: WO 98/45883 (1998-10-01), None
Gao, Guang-Bo, et al., “Thermal Design Studies of High-Power Heterojunction Bipolar Transistors”, IEEE Transaction on Electron Devices, vol. 36, No. 5, pp. 854-863, May 1999.
Hallen, Anders, et al., “Multiple Proton Energy Irradiation For Improved GTO Thyristors”, Solid-State Electronics, vol. 36, No. 2, pp. 133-141, 1993.
Liao, Chih-Hao, et al., “Optimum Design for a Thermally Stable Multifinger Power Transistor”, IEEE Transactions on Electron Devices, vol. 49, No. 5, pp. 902-908, May 2002.
Liu, William, et al., “Theoretical Calculations of Temperature and Current Profiles in Multi-Finger Heterojunction Bipolar Transistors”, Solid-State Electronics, vol. 36,No. 2, pp. 125-132, 1993.
Fogg and Associates LLC
Intersil America's Inc.
Le Thgao X.
Lundberg Scott V.
Pham Long
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