Bipolar transistor-field effect transistor composite circuit

Details Bipolar transistor-field effect transistor composite circuit Bipolar transistor-field effect transistor composite circuit

1984-12-11

1988-09-06

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307443, 307475, 307570, H03K 1901

Patent

active

047695617

ABSTRACT:
A bipolar transistor-complementary field effect transistor composite circuit is provided which includes a pair of first and second bipolar transistors each having a collector of a first conductivity type, a base of a second conductivity type and an emitter of a first conductivity type. Collector-emitter current paths of the bipolar transistors are connected in series to each other between first and second potentials, with a connection node providing an output of the composite circuit. Field effect transistors are respectively coupled between the bases and collectors of the bipolar transistors for controlling the on-off states of the bipolar transistors in opposite relationship to one another in response to an input signal provided to the composite circuit. Also, discharge arrangements are provided for the bases of the first and second bipolar transistors to discharge parasitic capacitance in the bases of the first and second bipolar transistors when they are turned off.

REFERENCES:
patent: 4538076 (1985-08-01), Shimada
patent: 4558234 (1985-12-01), Suzuki et al.
patent: 4616146 (1986-10-01), Lee et al.
Chin, "Push-Pull Driver Using Bipolar and Complementary Metal-Oxide Semiconductor Devices", IBM TDB, vol. 16, No. 11, Apr. 1974 pp. 3570-3571.

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