Fishing – trapping – and vermin destroying
Patent
1989-01-09
1990-10-09
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437186, 437162, 437 33, 437233, 357 34, 148DIG11, H01L 21255
Patent
active
049620533
ABSTRACT:
Disclosed is a bipolar transistor and a method of fabrication thereof compatible with MOSFET devices. A transistor intrinsic base region (54) is formed in the face of a semiconductor well (22), and covered with a gate oxide (44). The gate oxide (44) is opened, and doped polysilicon is deposited thereover to form a polyemitter structure (68) in contact with the base region (54). Sidewall oxide (82, 84) is formed on the polyemitter structure (60). A collector region (90) and an extrinsic base region (100) are formed in the semiconductor well (22) and self aligned with respect to opposing side edges of the polyemitter sidewall oxide (82, 84).
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Shah Rajiv R.
Spratt David
Barndt B. Peter
Chaudhuri Olik
Comfort James T.
McAndrews Kevin
Sharp Melvin
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