Bipolar transistor fabricated in a biCMOS process

Details Bipolar transistor fabricated in a biCMOS process Bipolar transistor fabricated in a biCMOS process

2011-08-09

2011-08-09

Matthews, Colleen A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257SE29114, C257SE29174

Reexamination Certificate

active

07994611

ABSTRACT:
According to one exemplary embodiment, a bipolar transistor includes a base having a top surface. The bipolar transistor further includes a base oxide layer situated on the top surface of the base. The bipolar transistor further includes an antireflective coating layer situated on the base oxide layer. The bipolar transistor further includes an emitter situated over the top surface of the base and the antireflective coating layer, where a layer of polysilicon is not situated between the base oxide layer and the emitter.

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