Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2006-05-23
2006-05-23
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S587000, C257S591000, C257S616000
Reexamination Certificate
active
07049681
ABSTRACT:
A Si1-xGexlayer111bfunctioning as the base composed of an i-Si1-xGexlayer and a p+Si1-xGexlayer is formed on a collector layer102,and a Si cap layer111aas the emitter is formed on the p+Si1-xGexlayer. An emitter lead electrode129,which is composed of an n−polysilicon layer129bcontaining phosphorus in a concentration equal to or lower than the solid-solubility limit for single-crystal silicon and a n+polysilicon layer129acontaining phosphorus in a high concentration, is formed on the Si cap layer111ain a base opening118.The impurity concentration distribution in the base layer is properly maintained by suppressing the Si cap layer111afrom being doped with phosphorus (P) in an excessively high concentration. The upper portion of the Si cap layer111amay contain a p-type impurity. The p-type impurity concentration distribution in the base layer of an NPN bipolar transistor is thus properly maintained.
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Asai Akira
Ohnishi Teruhito
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Wojciechowicz Edward
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