Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Complementary bipolar transistors
Patent
1995-09-15
1999-03-23
Dutton, Brian
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Complementary bipolar transistors
438327, 438370, 438373, 438375, 438376, 438377, H01L 218228, H01L 21331
Patent
active
058858806
ABSTRACT:
A semiconductor device is provided in which a vertical NPN transistor and a vertical PNP transistor electrically isolated from each other are formed on a p-type semiconductor substrate. An n-type buried separating region of the vertical PNP transistor is formed by high-energy ion implantation after formation of the n.sup.+ type buried collector region of the vertical NPN transistor, and a p.sup.+ type buried collector region of the vertical PNP transistor is formed subsequently to formation of an n-type epitaxial layer and a device separating region whereby the thickness of the n-type epitaxial layer is optimized to a required minimum value. A method for producing a semiconductor device is also provided in which a first vertical bipolar transistor of a first conductivity type and a second vertical bipolar transistor of a second conductivity type, electrically isolated from each other, are formed on a semiconductor substrate having a pre-set conductivity type. A buried collector region of the second vertical collector region is formed before formation of a buried collector region of the first vertical transistor.
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Dutton Brian
Kananen Ronald P.
Sony Corporation
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