Bipolar transistor device and method for fabricating the same

Details Bipolar transistor device and method for fabricating the same Bipolar transistor device and method for fabricating the same

2006-03-28

2006-03-28

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S200000

Reexamination Certificate

active

07019340

ABSTRACT:
A bipolar transistor device having first and second semiconductor layers each formed on a substrate and composed of a Group III–V compound semiconductor of a first conductivity type and a third semiconductor layer formed between the first and second semiconductor layers and composed of a group IV semiconductor of a second conductivity type.

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