Bipolar transistor controllable by field effect

Details Bipolar transistor controllable by field effect Bipolar transistor controllable by field effect

1989-02-21

1990-01-09

Munson, Gene M.

357 234, 357 38, 357 67, 357 71, 357 86, H01L 2978, H01L 2974

Patent

active

048931659

ABSTRACT:
A field effect controllable bipolar transistor or isolated gate bipolar transistor (IGBT) has a drastically reduced inhibit delay charge, given identical on-state behavior, in that the anode zone has a thickness of less that 1 micrometer, it is doped with implanted ions with a dose of about 1.times.10.sup.12 through 1.times.10.sup.15 cm.sup.-2, and in that the life time of the minority charge carriers in the inner zone amounts to at least 1 microsecond.

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patent: 4443931 (1984-04-01), Baliga et al.
patent: 4466176 (1984-08-01), Temple
patent: 4495513 (1985-01-01), Descamps
patent: 4620211 (1986-10-01), Baliga et al.
patent: 4779123 (1988-10-01), Bencuya et al.
patent: 4821095 (1989-04-01), Temple
Gary M. Dolny, "COMFET-The Ultimate Power Device", Nov. 1985, pp. 121-128.
Power Control, Jan. 12, 1984, pp. 248-250, Electronic Design.
Jerry G. Fossum, "Charge-Control Analysis of the COMFET Turn-Off Transient", IEEE Transactions of Electron Devices, vol. ED-33, No. 9, Sep. 1986, pp. 1377-1382.

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