1984-04-16
1986-12-23
Edlow, Martin H.
357 50, 357 56, 357 20, 357 59, H01L 2712
Patent
active
046315683
ABSTRACT:
A bipolar transistor structure and process for its manufacture. The structure includes an emitter region formed over a base region, and a thin wall of insulating material, such as a thermal oxide, along the edge of the emitter region. The wall of insulating material electrically isolates emitter and base contact areas, and greatly reduces the size of inactive portions of the base region, thereby reducing the base resistance and base-collector capacitance, and increasing the speed of operation of the transistor. The wall of insulating material is formed by a process that eliminates at least one photolithographic patterning and etching operation found in conventional processes. In a preferred embodiment of the invention, the emitter region is shaped to include a wide inactive region and an active region of which a portion has reduced width. This configuration provides for lower emitter resistance, but maintans a relatively long active emitter perimeter, which keeps the base resistances also low.
REFERENCES:
patent: 3671340 (1972-06-01), Irie et al.
patent: 4303933 (1981-12-01), Horng et al.
Edlow Martin H.
Heal Noel F.
TRW Inc.
Wallace Robert M.
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