Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1996-08-26
1998-07-14
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
323313, 323314, 323303, 3072966, 3072967, F02P 305
Patent
active
057809216
ABSTRACT:
A bipolar transistor constant voltage source circuit includes a first transistor having a collector connected through a first resistor to VCC, an emitter connected through a second resistor to ground, and a base connected to receive a reference voltage. The collector of the first transistor is connected to a base of a second transistor having a collector connected to VCC and an emitter connected to the ground through third and fourth resistors connected in series. A connection node between the third and fourth resistors is connected to a base of a third transistor having a collector connected through a fifth resistor to VCC and an emitter connected through a sixth resistor to the ground. The very simple circuit construction thus formed can supply from the collector of the third transistor an output voltage which becomes equal to VCC when VCC is still low just after the overall semiconductor integrated circuit including the constant voltage source circuit has been powered on, and which can be set, in a constant voltage outputting condition, to an arbitrary level which is influenced by neither variation in temperature nor variation in VCC.
REFERENCES:
patent: 4608529 (1986-08-01), Mallinson
patent: 5049806 (1991-09-01), Urakawa et al.
patent: 5603308 (1997-02-01), Ooyabu et al.
NEC Corporation
Whitehead Jr. Carl W.
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