Bipolar transistor comprising carbon-doped semiconductor

Details Bipolar transistor comprising carbon-doped semiconductor Bipolar transistor comprising carbon-doped semiconductor

2008-09-02

2008-09-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S163000, C257S164000, C257S165000, C257S166000, C257S378000, C257S423000, C257S477000, C257S517000, C257S526000, C257S539000, C257S565000, C257S575000, C257SE27074, C257SE29034, C257SE31069

Reexamination Certificate

active

11246420

ABSTRACT:
A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a second side of the collector region, and an emitter region of the first conduction type which is provided above the base region on the side remote from the collection region. A carbon-doped semiconductor region is provided on the first side alongside the collector region. The bipolar transistor is characterized in that the carbon-doped semiconductor region has a carbon concentration of 1019-1021cm−3and the base region has a smaller cross section than the collector region and the collector region has, in the overlap region with the base region, a region having an increased doping compared with the remaining region. The carbon-doped semiconductor region prevents an outdiffusion from the zone of the collector region into the remaining region of the collector region.

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