Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1997-02-26
1998-06-02
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257580, 257197, 257201, 257581, 257532, 257536, 257539, 257583, H01L 2900, H01L 310328
Patent
active
057604576
ABSTRACT:
A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed from parts of the collector, base, and emitter layers and including a base electrode electrically connected to the base layer and a base electrode pad for making an external connection to the base layer; a base ballasting resistor formed from a part of the base layer isolated from the bipolar transistor and electrically connecting the base electrode to the base electrode pad; and a base parallel capacitor connected in parallel with the base ballasting resistor wherein the base parallel capacitor includes part of the base input pad, a dielectric film disposed on part of the base electrode pad, and a second electrode disposed on the dielectric layer opposite the base electrode pad and electrically connected to the emitter electrode of the bipolar transistor. The base ballasting resistor has a high resistance relative to an emitter ballasting reactor so that it can be easily mass produced with good uniformity and yield.
REFERENCES:
patent: 5321279 (1994-06-01), Khatibzadeh et al.
patent: 5373170 (1994-12-01), Pfiester et al.
patent: 5506427 (1996-04-01), Imai
patent: 5532486 (1996-07-01), Stanchina et al.
Mitsui Shigeru
Shimura Teruyuki
Sonoda Takuji
Takamiya Saburo
Abraham Fetsum
Fahmy Wael
Mitsubishi Denki & Kabushiki Kaisha
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