Bipolar transistor circuit capable of high precision measurement

Details Bipolar transistor circuit capable of high precision measurement Bipolar transistor circuit capable of high precision measurement

1994-11-29

1997-04-29

Regan, Maura K.

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

324768, 327380, 330290, G01R 2726

Patent

active

056252951

ABSTRACT:
In a semiconductor device, a first resistor is connected between the base and collector of a dummy bipolar transisitor, a second resistor is connected between the base and emitter of the dummy bipolar transistor, and a third resistor is connected to the collector of the dummy bipolar transistor. A first pad and a second pad are connected to the base and emitter, respectively, of the dummy bipolar transistor. A third pad is connected to the third resistor. A fourth pad is connected to the collector of the dummy bipolar transistor.

REFERENCES:
patent: 3348145 (1967-10-01), Erath
patent: 3350641 (1967-10-01), Lubkin et al.
patent: 3376568 (1968-04-01), Stewart
patent: 4268798 (1981-05-01), Reichart
patent: 4275453 (1981-06-01), Wagner
patent: 5286656 (1994-02-01), Keown et al.
Johnston et al. IEEE Transactions on Nuclear Science vol. NS-22, No. 6, Dec. 1975.
Lewis. Wireless World May 1973 Meterless Transistor Testor vol. 79, No. 1451.

Affiliated with

Also associated with

Rating

Bipolar transistor circuit capable of high precision measurement does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar transistor circuit capable of high precision measurement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor circuit capable of high precision measurement will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-708959