Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-09-24
1997-04-29
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257200, 257586, 330285, 330300, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
056252056
ABSTRACT:
In an NPN type bipolar transistor, by employing AlGaAs or InGaAs having greater band gap than silicon, for an emitter and a base, doping amount of the emitter can be made smaller than that of the base to permit improvement of reverse withstanding voltage between the base and the emitter. Therefore, B class or C class bias can be used in a microwave band to improve efficiency.
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NEC Corporation
Ngo Ngan V.
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