Bipolar transistor circuit

Details Bipolar transistor circuit Bipolar transistor circuit

1975-04-09

1976-12-28

James, Andrew J.

357 14, 357 16, 357 58, 357 90, H01L 2972

Patent

active

040005062

ABSTRACT:
A transistor circuit comprising a bipolar transistor with high input impedance is disclosed. The transistor has low emitter-base conductance, and especially has a low conductance component caused by the recombination of minority carriers in an emitter. The emitter capacitance caused by stored minority carriers is low because of the low conductance component. These enable emitter-grounded operation at high current gain and high frequency.

REFERENCES:
patent: 2822310 (1958-02-01), Stieltjes et al.
patent: 3591430 (1971-07-01), Schlegel
patent: 3761319 (1973-09-01), Shannon
H. Kroemer, "Theory of Wide-Gap Emitter For Transistors," Proc. Ire, vol. 45, No. 11, pp. 1535-1537, TK5700I7, Nov. 1957.

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