Bipolar transistor as protective element for integrated circuits

Details Bipolar transistor as protective element for integrated circuits Bipolar transistor as protective element for integrated circuits

1991-03-18

1992-09-15

Mintel, William

357 2315, 357 238, 357 51, 357 43, H01L 2906, H01L 2978, H01L 2968

Patent

active

051482509

ABSTRACT:
Bipolar transistor in a protective element for integrated circuits. A bipolar transistor is used as a part of a protective element against electrical high voltages for integrated circuits in their integrated and dismantled condition, this bipolar transistor being insulated from the integrated circuit. A base terminal of the bipolar transistor is connected to a first voltage reference, a collector terminal is connected to a second voltage reference and an emitter terminal is connected to an input or output of the integrated circuit that is to be protected. As a result of the interconnection of the bipolar transistor and as a result of the insulation of the semiconductor substrate, substrate currents that occur during operation are kept as low as possible and the danger of a "latch-up" is thereby suppressed. The protective element may further contain an MOS field effect transistor or a resistive element.

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"A Summary of Most Effective Electrostatic Discharge Protection Circuits for MOS Memories and Their Observed Failure Modes", by C. Duvvury et al., pp. 181-184, EOS/ESD Symp. Proc. 1983, (1983).
"Protection of MOS Integrated Circuits From Destruction By Electrostatic Discharge", by Jack K. Keller, pp. 73-80, EOS/ESD Symp. Proc. 1980, (1980).

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