Bipolar transistor apparatus with iso-terminals

Details Bipolar transistor apparatus with iso-terminals Bipolar transistor apparatus with iso-terminals

1993-01-22

1995-04-25

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 90, 257577, 257587, H01L 2712, H01L 4500, H01L 4902

Patent

active

054101581

ABSTRACT:
Apparatus including a diamond semiconductor material bipolar transistor having associated therewith a distally disposed iso-collector. The iso-collector, when operated with a suitable voltage, provides a communicating electric field to the bipolar transistor collector which, in concert with a voltage coupled to the transistor base places the apparatus in an ON mode to induce electrons to be emitted from the collector and to be subsequently collected at the iso-collector. An iso-base is optionally, distally disposed relative to the base of the bipolar transistor.

REFERENCES:
patent: 2960659 (1960-11-01), Burton
patent: 3959026 (1976-05-01), Marine et al.
Bazhehou et al. `Synthetic Diamonds in Electronics'`, Sov Phys Semicond, Aug. 85, pp. 829-841.

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