Bipolar transistor and radio frequency amplifier circuit

Details Bipolar transistor and radio frequency amplifier circuit Bipolar transistor and radio frequency amplifier circuit

2011-06-14

2011-06-14

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257S511000, C257SE29188, C438S170000, C438S189000, C438S202000

Reexamination Certificate

active

07960758

ABSTRACT:
A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes: a direct-current (DC) bias terminal to which a DC bias is supplied; a DC base electrode connected to the DC terminal; a radio frequency (RF) power terminal to which a radio frequency signal is supplied; an RF base electrode connected to the RF terminal; and a base layer connected to the DC base electrode and the RF base electrode.

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Japanese Office Action issued in Japanese Patent Application No. JP 2006-086256 dated Dec. 8, 2009.

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